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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Paruch, Patrycja
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2023Mapping the complex evolution of ferroelastic/ferroelectric domain patterns in epitaxially strained PbTiO3 heterostructurescitations
- 2021Local and correlated studies of humidity-mediated ferroelectric thin film surface charge dynamics
- 2021Local and correlated studies of humidity-mediated ferroelectric thin film surface charge dynamicscitations
- 2020Full control of polarization in ferroelectric thin films using growth temperature to modulate defectscitations
- 2017Non-Ising and chiral ferroelectric domain walls revealed by nonlinear optical microscopycitations
- 2016A single probe for imaging photons, electrons and physical forcescitations
- 2014Effect of thermal annealing on ferroelectric domain structures in poly(vinylidene-fluoride-trifluorethylene) Langmuir-Blodgett thin filmscitations
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article
Effect of thermal annealing on ferroelectric domain structures in poly(vinylidene-fluoride-trifluorethylene) Langmuir-Blodgett thin films
Abstract
<jats:p>We report a piezo-response force microscopy study of the effect of thermal annealing on ferroelectric domain structures in 6 to 20 monolayer (11 to 36 nm) polycrystalline poly(vinylidene-fluoride-trifluorethylene) thin films prepared using the Langmuir-Blodgett approach. Stripe-shape domains have been created at room temperature and subjected to thermal annealing at progressively higher temperatures up to the ferroelectric Curie temperature TC of approximately 110 °C. The static configuration of the domain walls exhibits no appreciable temperature dependence after thermal annealing, with the domain-wall roughness exponent ζ ranging from 0.4 to 0.5. Above 80 °C, we observed spontaneous polarization reversal at randomly scattered local sites in both polarization states. The number of domain nucleation centers increases rapidly as a function of temperature. We compared the thermally driven domain formation in ferroelectric polymers with those observed in ferroelectric oxides and attributed the difference to the distinct mechanisms for domain formation in these two systems.</jats:p>