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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Uren, Michael J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2020Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlNcitations
- 2020Polarity dependence in Cl 2 -based plasma etching of GaN, AlGaN and AlNcitations
- 2018Determination of the self-compensation ratio of carbon in AlGaN for HEMTscitations
- 2018Determination of the self-compensation ratio of carbon in AlGaN for HEMTscitations
- 2017Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETscitations
- 2015Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 Vcitations
- 2014Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistorscitations
- 2009Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layerscitations
- 2007Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices
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article
Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors
Abstract
The evolution of AlGaN/GaN high electron-mobility transistors under off-state stress conditions is studied by gate leakage current (Ig) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature. It is found that the number of off-state failure sites as identified by EL increases over time during stress until it reaches a saturation value. Ig increases accordingly during stress until this saturation number of failure sites is reached. AFM scanning of the device surface stripped of metal contacts and passivation reveals surface pits corresponding to the location of the EL spots. These pits have an elongated shape oriented towards the drain contact whose length is correlated with the distance to the adjacent pits and with the time since their appearance during the stress experiment. A model for the generation and evolution of the off-state stress-related failure sites is proposed consistent with the experimental results, bringing together surface migration of electrochemical species with trap-based leakage mechanisms and resulting in the formation of an exclusion zone around each failure site.