• Bertram, Florian
• Wollschläger, Joachim
• Schmidt, Thomas
• Kaemena, Björn
• Höcker, Jan
• Falta, Jens
• Flege, Jan Ingo

Abstract

<jats:p>It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidized CeO2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.</jats:p>

Topics

• impedance spectroscopy
• x-ray diffraction
• Silicon
• crystallinity
• Cerium