| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Marty, Alain
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Light-driven Electrodynamics and Demagnetization in Fe$_n$GeTe$_2$ (n = 3, 5) Thin Films
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2023Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
- 2023Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor depositioncitations
- 2023Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor depositioncitations
- 2022Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Control of spin-charge conversion in van der Waals heterostructurescitations
- 2021Control of spin–charge conversion in van der Waals heterostructurescitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Sicitations
- 2019Spin-dependent transport characterization in metallic lateral spin valves using one-dimensional and three-dimensional modelingcitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Sicitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperaturescitations
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2018Calculation method of spin accumulations and spin signals in nanostructures using spin resistorscitations
- 2017Imaging spin diffusion in germanium at room temperaturecitations
- 2016Spin Hall effect in AuW alloys
- 2014Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structurescitations
- 2014Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structurescitations
- 2007Electric field-induced modification of magnetism in thin-film ferromagnetscitations
- 2006High-Curie-temperature ferromagnetism in self-organized GeMn nanocolumns
Places of action
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article
Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structures
Abstract
We present a magneto-optical Kerr effect study of the magnetization reversal in a FePt/Al2O3 structure under electric (E) fields generated in a liquid electrolyte environment. The FePt film was partially covered with a thick Al2O3 layer that allowed for the study of a pinned domain wall between two regions of different coercive field. Depinning of the trapped domain wall into the region of higher coercivity was achieved by applying positive gate voltages during the magnetic field ramp and prevented in the presence of negative gate voltages. Moving from positive to negative gate voltages produced, in addition, an increase (decrease) in the number (size) of reverse domains in the high anisotropy region. This effect has been associated to an E-field induced decrease of the saturation field. Using a liquid gate to assist domain wall depinning as presented here can be used for the control of multiple pinning structures in parallel.