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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ternon, Céline
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Topics
Publications (9/9 displayed)
- 2024Tuning the synaptic properties of TiN/La2NiO4+δ/Pt memristive devices by post-deposition annealing
- 2024Impact of the La 2 NiO 4+δ Oxygen Content on the Synaptic Properties of the TiN/La 2 NiO 4+δ /Pt Memristive Devices
- 2024Impact of the La2NiO4+d oxygen content on the synaptic properties of the TiN/La2NiO4+d/Pt memristive devices
- 2023Aptamer conjugated Si nanowire network/poly(pyrrole)-NTA structure for electrochemical sensingcitations
- 2022Multifunctional ZnO nanowires‐based nanocomposites by capillary rise infiltration ; Multifunctional ZnO nanowires‐based nanocomposites by capillary rise infiltration: Nanomaterials for Drinking Water Technologies
- 2013Electron scattering mechanisms in fluorine-doped SnO2 thin filmscitations
- 2011Morphological and electrical characterization of ZnO nanocomposites in dye-sensitized solar cellscitations
- 2009Emerging Nanotechnology for integration of Nanostructures in Nanoelectronic devicescitations
- 2007MOCVD of BiFeO3 thin films on SrTiO3citations
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article
Electron scattering mechanisms in fluorine-doped SnO2 thin films
Abstract
Polycrystalline fluorine-doped SnO2 (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 center dot 10(-4)Omega cm (square sheet resistance of 8 Omega/square) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained. (c) 2013 AIP Publishing LLC.