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Hedhili, M. N.
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Publications (4/4 displayed)
- 2015Highly stable thin film transistors using multilayer channel structurecitations
- 2015Electroforming free resistive switching memory in two-dimensional VOx nanosheetscitations
- 2013In situ growth of p and n-type graphene thin films and diodes by pulsed laser depositioncitations
- 2012Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometrycitations
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article
In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition
Abstract
We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.