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Sarath Kumar, S. R.
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Publications (7/7 displayed)
- 2013Ultraviolet laser deposition of graphene thin films without catalytic layerscitations
- 2013Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin filmscitations
- 2013In situ growth of p and n-type graphene thin films and diodes by pulsed laser depositioncitations
- 2012Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin filmscitations
- 2012Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometrycitations
- 2012Enhanced carrier density in Nb-doped SrTiO3 thermoelectricscitations
- 2011Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin filmscitations
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article
In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition
Abstract
We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.