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| Naji, M. |
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Nygård, Jesper
University of Copenhagen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2021Superconductivity and Parity Preservation in As-Grown in Islands on InAs Nanowirescitations
- 2021Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowirescitations
- 2017Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowirescitations
- 2016Construction of insulin 18-mer nanoassemblies driven by coordination to Iron(II) and Zinc(II) ions at distinct sitescitations
- 2016Majorana bound states in a coupled quantum-dot hybrid-nanowire systemcitations
- 2015Hard gap in epitaxial semiconductor-superconductor nanowirescitations
- 2013Low temperature transport in p-doped InAs nanowirescitations
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article
Low temperature transport in p-doped InAs nanowires
Abstract
We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.