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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Patel, M.
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Publications (9/9 displayed)
- 2020Towards understanding grain nucleation under Additive Manufacturing solidification conditionscitations
- 2020A fast efficient multi-scale approach to modelling the development of hydride microstructures in zirconium alloyscitations
- 2020Effects of temperature and filler content on the creep behaviour of a polyurethane rubber
- 2015Computational electrohydrodynamics in the fabrication of hollow polymer microstructurescitations
- 2013Thermoelectric performance of Cu intercalated layered TiSe2 above 300 Kcitations
- 2009The thermal degradation behaviour of polydimethylsiloxane/montmorillonite nanocompositescitations
- 2009Degradative thermal analysis and dielectric spectroscopy studies of aging in polysiloxane nanocomposites
- 2008The stability of polysiloxanes incorporating nano-scale physical property modifierscitations
- 2008Investigating the ageing behavior of polysiloxane nanocomposites by degradative thermal analysiscitations
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article
Thermoelectric performance of Cu intercalated layered TiSe2 above 300 K
Abstract
High temperature (300–650 K) thermoelectric performance of Cu intercalated Cu x TiSe2 (x = 0−0.11) material has been investigated. Cu intercalation transforms the p-type TiSe2 to n-type Cu xTiSe2 with significant Seebeck coefficient value saturating to ∼−90 μV/K (x ≥ 0.06) at 650 K. Spanning the entire range of Cu xTiSe2 samples, very low thermal conductivity has been observed which is attributed to the layered growth structure and rattling effect of weakly bound Cu atoms in the van der Waals gaps of TiSe2 layers. Figure of merit (ZT) value of 0.1 and 0.15 is achieved for pure TiSe2 and Cu 0.11TiSe2 samples, respectively, at 650 K. The 4-element thermoelectric generator fabricated using a combination of p-type TiSe2 and n-type Cu 0.11TiSe2 is designed, which gives an output power of 0.64 mW at 650 K.