Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
693.932 People People

693.932 People

Show results for 693.932 people that are selected by your search filters.

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Naji, M.
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Chroneos, A.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (9/9 displayed)

  • 2022DFT insights into the electronic structure, mechanical behaviour, lattice dynamics and defect processes in the first Sc-based MAX phase Sc2SnC36citations
  • 2022Theoretical investigation of nitrogen-vacancy defects in silicon9citations
  • 2022Core-shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes1citations
  • 2021A high-entropy manganite in an ordered nanocomposite for long-term application in solid oxide cellscitations
  • 2021A high-entropy manganite in an ordered nanocomposite for long-term application in solid oxide cells.citations
  • 2020Elastic behaviour and radiation tolerance in Nb-based 211 MAX phases29citations
  • 2018Physical properties and defect processes of M3SnC2 (M = Ti, Zr, Hf) MAX phases65citations
  • 2017Mechanical behavior, bonding nature and defect processes of Mo2ScAlC276citations
  • 2013Vacancies and defect levels in III-V semiconductors55citations

Places of action

Chart of shared publication
H., Naqib S.
1 / 1 shared
G., Christopoulos S.-R.
2 / 2 shared
A., Hadi M.
1 / 1 shared
A., Islam A. K. M.
1 / 1 shared
S., Potsidi M.
1 / 1 shared
A., Londos C.
1 / 1 shared
V., Sarlis N.
1 / 1 shared
Kuganathan, N.
1 / 1 shared
C., Palilis L.
1 / 1 shared
Panagiotakis, S.
1 / 1 shared
Yannakopoulou, K.
1 / 1 shared
Skoulikidou, M.-C.
1 / 1 shared
Vasilopoulou, M.
1 / 5 shared
Soultati, A.
1 / 2 shared
Argitis, P.
1 / 1 shared
Landrou, G.
1 / 1 shared
Ladomenou, K.
1 / 1 shared
Armadorou, K.-K.
1 / 1 shared
M., Yusoff A. R. B.
1 / 1 shared
Fillipatos, P.-P.
1 / 1 shared
Verykios, A.
1 / 1 shared
Tountas, M.
1 / 2 shared
G., Coutsolelos A.
1 / 1 shared
Tarancãn Rubio, Albert
1 / 2 shared
Diercks, David
1 / 4 shared
Morata, Alex
1 / 16 shared
Santiso, Josã
1 / 17 shared
Driscoll, Judith
1 / 7 shared
Parfitt, D.
2 / 2 shared
Wang, X.
2 / 79 shared
Wang, Haiyan
1 / 15 shared
Baiutti, Federico
1 / 12 shared
Acosta, Matias
1 / 12 shared
Chiabrera, Francesco Maria
1 / 11 shared
Cavallaro, Andrea
1 / 29 shared
Tarancon, A.
1 / 12 shared
Macmanus-Driscoll, J.
1 / 2 shared
Diercks, D.
1 / 1 shared
Morata, A.
1 / 10 shared
Cavallaro, A.
1 / 11 shared
Santiso, J.
1 / 6 shared
Baiutti, F.
1 / 6 shared
Chiabrera, F.
1 / 2 shared
Wang, H.
1 / 52 shared
Acosta, M.
1 / 7 shared
Christopoulos, Stavros-Richard G.
3 / 11 shared
Hadi, M. A.
3 / 6 shared
Islam, A. K. M. A.
3 / 11 shared
Naqib, S. H.
3 / 9 shared
Fitzpatrick, M. E.
1 / 20 shared
Grimes, R. W.
1 / 8 shared
Schwingenschloegl, U.
1 / 1 shared
Tahini, H. A.
1 / 1 shared
Murphy, St
1 / 8 shared
Chart of publication period
2022
2021
2020
2018
2017
2013

Co-Authors (by relevance)

  • H., Naqib S.
  • G., Christopoulos S.-R.
  • A., Hadi M.
  • A., Islam A. K. M.
  • S., Potsidi M.
  • A., Londos C.
  • V., Sarlis N.
  • Kuganathan, N.
  • C., Palilis L.
  • Panagiotakis, S.
  • Yannakopoulou, K.
  • Skoulikidou, M.-C.
  • Vasilopoulou, M.
  • Soultati, A.
  • Argitis, P.
  • Landrou, G.
  • Ladomenou, K.
  • Armadorou, K.-K.
  • M., Yusoff A. R. B.
  • Fillipatos, P.-P.
  • Verykios, A.
  • Tountas, M.
  • G., Coutsolelos A.
  • Tarancãn Rubio, Albert
  • Diercks, David
  • Morata, Alex
  • Santiso, Josã
  • Driscoll, Judith
  • Parfitt, D.
  • Wang, X.
  • Wang, Haiyan
  • Baiutti, Federico
  • Acosta, Matias
  • Chiabrera, Francesco Maria
  • Cavallaro, Andrea
  • Tarancon, A.
  • Macmanus-Driscoll, J.
  • Diercks, D.
  • Morata, A.
  • Cavallaro, A.
  • Santiso, J.
  • Baiutti, F.
  • Chiabrera, F.
  • Wang, H.
  • Acosta, M.
  • Christopoulos, Stavros-Richard G.
  • Hadi, M. A.
  • Islam, A. K. M. A.
  • Naqib, S. H.
  • Fitzpatrick, M. E.
  • Grimes, R. W.
  • Schwingenschloegl, U.
  • Tahini, H. A.
  • Murphy, St
OrganizationsLocationPeople

article

Vacancies and defect levels in III-V semiconductors

  • Grimes, R. W.
  • Schwingenschloegl, U.
  • Tahini, H. A.
  • Chroneos, A.
  • Murphy, St
Abstract

<p>Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (-3</p>

Topics
  • defect
  • III-V semiconductor