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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Levander, A. X.
in Cooperation with on an Cooperation-Score of 37%
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Publications (6/6 displayed)
- 2013Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition rangecitations
- 2013Microstructure of Mg doped GaNAs alloyscitations
- 2012Structural studies of GaN 1-x As x and GaN 1-x Bi x alloys for solar cell applicationscitations
- 2011GaNAs alloys over the whole composition range grown on crystalline and amorphous substratescitations
- 2010GaN1-xBixcitations
- 2010Low gap amorphous GaN1-x Asx alloys grown on glass substratecitations
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article
Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range
Abstract
Typically only dilute (up to ∼10%) highly mismatched alloys can be grown due to the large differences in atomic size and electronegativity of the host and the alloying elements. We have overcome the miscibility gap of the GaN<sub>1-x</sub>As<sub>x</sub> system using low temperature molecular beam epitaxy. In the intermediate composition range (0.10 <x <0.75), the resulting alloys are amorphous. To gain a better understanding of the amorphous structure, the local environment of the As and Ga atoms was investigated using extended x-ray absorption fine structure (EXAFS). The EXAFS analysis shows a high concentration of dangling bonds compared to the crystalline binary endpoint compounds of the alloy system. The disorder parameter was larger for amorphous films compared to crystalline references, but comparable with other amorphous semiconductors. By examining the Ga local environment, the dangling bond density and disorder associated with As-related and N-related bonds could be decoupled. The N-related bonds had a lower dangling bond density and lower disorder. © 2013 AIP Publishing LLC.