| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schwingenschlogl, Udo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2017Amorphous NiFe-OH/NiFeP Electrocatalyst Fabricated at Low Temperature for Water Oxidation Applicationscitations
- 2017Quantum-corrected transient analysis of plasmonic nanostructurescitations
- 2016k-asymmetric spin splitting at the interface between transition metal ferromagnets and heavy metalscitations
- 2016Plasma-Assisted Synthesis of NiCoP for Efficient Overall Water Splittingcitations
- 2015Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexescitations
- 2015Is NiCo2S4 really a semiconductor?citations
- 2014Lithiation-induced shuffling of atomic stackscitations
- 2014Large thermoelectric power factor in Pr-doped SrTiO3-δ ceramics via grain-boundary-induced mobility enhancementcitations
- 2013Record mobility in transparent p-type tin monoxide films and devices by phase engineeringcitations
- 2013Enhancement of p-type mobility in tin monoxide by native defectscitations
- 2013Major enhancement of the thermoelectric performance in Pr/Nb-doped SrTiO3 under straincitations
- 2012Enhanced carrier density in Nb-doped SrTiO3 thermoelectricscitations
- 2010Variation of equation of state parameters in the Mg2(Si 1-xSnx) alloyscitations
Places of action
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article
Enhancement of p-type mobility in tin monoxide by native defects
Abstract
Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.