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Seravalli, L.
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Publications (5/5 displayed)
- 2023Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry studycitations
- 2021Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor depositioncitations
- 2020Ga2O3 polymorphs: Tailoring the epitaxial growth conditionscitations
- 2020Direct growth of germanium nanowires on glasscitations
- 2013The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dotscitations
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article
The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots
Abstract
[EN] The structural and morphological features of bimodal-sized InAs/(In) GaAs quantum dots with density in the low 10(9) cm(-2) range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and time-resolved photoluminescence. We show that only the family of small quantum dots (QDs) is able to emit narrow photoluminescence peaks characteristic of single-QD spectra; while the behavior of large QDs is attributed to large strain fields that may induce defects affecting their optical properties, decreasing the optical intensity and broadening the homogeneous linewidth. Then, by using a rate-equation model for the exciton recombination dynamics, we show that thermal population of dark states is inhibited in both QD families capped by high In content InGaAs layers. We discuss this behavior in terms of alloy disorder and increased density of point defects in the InGaAs pseudomorphic layer. ; This work was supported through the Spanish MCINN and Generalitat Valenciana Grants Nos. TEC2011-29120-C05-01 and PROMETEO/2009/074, respectively, and by the 'SANDiE' Network of Excellence of EC, Contract No. NMP4-CT-2004-500101. AFM measurements were carried out at CIM-Parma University. ; Trevisi, G.; Suárez, I.; Seravalli, L.; Rivas, D.; Frigeri, P.; Muñoz Matutano, G.; Grillo, V. (2013). The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots. Journal of Applied Physics. 113(19):1943061-1943068. https://doi.org/10.1063/1.4805351 ; 1943061 ; 1943068 ; 113 ; 19 ; Salter, C. L., Stevenson, R. M., Farrer, I., Nicoll, C. A., Ritchie, D. A., & Shields, A. J. (2010). An entangled-light-emitting diode. Nature, 465(7298), 594-597. doi:10.1038/nature09078 ; Faraon, A., Majumdar, A., Englund, D., Kim, E., Bajcsy, M., & Vučković, J. (2011). Integrated quantum optical networks based on quantum dots and photonic crystals. New Journal of Physics, 13(5), 055025. doi:10.1088/1367-2630/13/5/055025 ...