Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (4/4 displayed)

  • 2021Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrays7citations
  • 2014Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates86citations
  • 2013Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate83citations
  • 2007A1(x)Ga(1-x)N ultraviolet avalanche photodiodes grown on GaN substrates23citations

Places of action

Chart of shared publication
Bakhtiary-Noodeh, Marzieh
1 / 1 shared
Ghuman, Parminder
1 / 1 shared
Sood, Ashok K.
1 / 2 shared
Dupuis, Russell D.
4 / 6 shared
Zeller, John W.
1 / 1 shared
Babu, Sachidananda
1 / 1 shared
Cho, Minkyu
1 / 1 shared
Xu, Zhiyu
1 / 1 shared
Detchprohm, Theeradetch
2 / 4 shared
Jeong, Hoon
1 / 1 shared
Kao, Tsung-Ting
2 / 2 shared
Li, Xiao-Hang
2 / 2 shared
Satter, Md. Mahbub
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Yoder, P. Douglas
2 / 3 shared
Martens, Martin
1 / 1 shared
Xie, Hongen
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Reich, Christoph
1 / 1 shared
Wei, Yong O.
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Kneissl, Michael
1 / 7 shared
Ponce, Fernando A.
2 / 3 shared
Wang, Shuo
1 / 2 shared
Wernicke, Tim
1 / 6 shared
Lochner, Zachary
1 / 2 shared
Liu, Yuh-Shiuan
1 / 1 shared
Wei, Yong
1 / 3 shared
Ryou, Jae-Hyun
2 / 5 shared
Hanser, Drew
1 / 2 shared
Zhang, Yun
1 / 8 shared
Yoo, Dongwon
1 / 2 shared
Evans, Keith
1 / 5 shared
Limb, Jae
1 / 2 shared
Chart of publication period
2021
2014
2013
2007

Co-Authors (by relevance)

  • Bakhtiary-Noodeh, Marzieh
  • Ghuman, Parminder
  • Sood, Ashok K.
  • Dupuis, Russell D.
  • Zeller, John W.
  • Babu, Sachidananda
  • Cho, Minkyu
  • Xu, Zhiyu
  • Detchprohm, Theeradetch
  • Jeong, Hoon
  • Kao, Tsung-Ting
  • Li, Xiao-Hang
  • Satter, Md. Mahbub
  • Yoder, P. Douglas
  • Martens, Martin
  • Xie, Hongen
  • Reich, Christoph
  • Wei, Yong O.
  • Kneissl, Michael
  • Ponce, Fernando A.
  • Wang, Shuo
  • Wernicke, Tim
  • Lochner, Zachary
  • Liu, Yuh-Shiuan
  • Wei, Yong
  • Ryou, Jae-Hyun
  • Hanser, Drew
  • Zhang, Yun
  • Yoo, Dongwon
  • Evans, Keith
  • Limb, Jae
OrganizationsLocationPeople

article

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

  • Lochner, Zachary
  • Kao, Tsung-Ting
  • Liu, Yuh-Shiuan
  • Li, Xiao-Hang
  • Satter, Md. Mahbub
  • Ponce, Fernando A.
  • Yoder, P. Douglas
  • Shen, Shyh-Chiang
  • Dupuis, Russell D.
  • Xie, Hongen
  • Wei, Yong
  • Ryou, Jae-Hyun
Abstract

<jats:p>Deep-ultraviolet lasing was achieved at 243.5 nm from an AlxGa1−xN-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.</jats:p>

Topics
  • density
  • impedance spectroscopy
  • defect
  • chemical vapor deposition