Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (5/5 displayed)

  • 2017Temperature-dependent thermal conductivity of flexible yttria-stabilized zirconia substrate via 3ω technique6citations
  • 2015Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition6citations
  • 2013Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate83citations
  • 2008Growth and Characterization of High-Performance GaN and AlxGa1-xN Ultraviolet Avalanche Photodiodes Grown on GaN Substrates1citations
  • 2007A1(x)Ga(1-x)N ultraviolet avalanche photodiodes grown on GaN substrates23citations

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Chart of shared publication
Shervin, Shahab
1 / 1 shared
Yarali, Milad
1 / 1 shared
Mavrokefalos, Anastassios
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Olenick, John A.
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Olenick, Kathy
1 / 2 shared
Venkateswaran, Venkat
1 / 1 shared
Dupuis, Russell
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Ji, Mi-Hee
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Kim, Jeomoh
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Detchprohm, Theeradetch
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Lochner, Zachary
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Kao, Tsung-Ting
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Liu, Yuh-Shiuan
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Li, Xiao-Hang
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Satter, Md. Mahbub
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Ponce, Fernando A.
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Yoder, P. Douglas
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Shen, Shyh-Chiang
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Dupuis, Russell D.
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Xie, Hongen
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Wei, Yong
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Shen, Shyh-Chinag
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Zhang, Yun
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Yoder, Paul D.
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Hanser, A. Drew
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Yoo, Dongwon
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Evans, Keith
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Limb, Jae
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Hanser, Drew
1 / 2 shared
Chart of publication period
2017
2015
2013
2008
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Co-Authors (by relevance)

  • Shervin, Shahab
  • Yarali, Milad
  • Mavrokefalos, Anastassios
  • Olenick, John A.
  • Olenick, Kathy
  • Venkateswaran, Venkat
  • Dupuis, Russell
  • Ji, Mi-Hee
  • Kim, Jeomoh
  • Detchprohm, Theeradetch
  • Lochner, Zachary
  • Kao, Tsung-Ting
  • Liu, Yuh-Shiuan
  • Li, Xiao-Hang
  • Satter, Md. Mahbub
  • Ponce, Fernando A.
  • Yoder, P. Douglas
  • Shen, Shyh-Chiang
  • Dupuis, Russell D.
  • Xie, Hongen
  • Wei, Yong
  • Shen, Shyh-Chinag
  • Zhang, Yun
  • Yoder, Paul D.
  • Hanser, A. Drew
  • Yoo, Dongwon
  • Evans, Keith
  • Limb, Jae
  • Hanser, Drew
OrganizationsLocationPeople

article

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

  • Lochner, Zachary
  • Kao, Tsung-Ting
  • Liu, Yuh-Shiuan
  • Li, Xiao-Hang
  • Satter, Md. Mahbub
  • Ponce, Fernando A.
  • Yoder, P. Douglas
  • Shen, Shyh-Chiang
  • Dupuis, Russell D.
  • Xie, Hongen
  • Wei, Yong
  • Ryou, Jae-Hyun
Abstract

<jats:p>Deep-ultraviolet lasing was achieved at 243.5 nm from an AlxGa1−xN-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.</jats:p>

Topics
  • density
  • impedance spectroscopy
  • defect
  • chemical vapor deposition