People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Parka, Janusz
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2022Active control of dielectric singularities in indium-tin-oxides hyperbolic metamaterialscitations
- 2022Active control of dielectric singularities in indium-tin-oxides hyperbolic metamaterialscitations
- 2013Microwave complex permittivity of voltage-tunable nematic liquid crystals measured in high resistivity silicon transducerscitations
- 2013Dielectric properties of highly anisotropic nematic liquid crystals for tunable microwave componentscitations
- 2011Silver-Gelatine Metal-Dielectric Composites Made From Developed X-Ray Filmscitations
- 2011Experimental study of thermally controlled metamaterial containing a liquid crystal layer at microwave frequenciescitations
- 2007Measurements of anisotropic complex permittivity of liquid crystals at microwave frequenciescitations
Places of action
Organizations | Location | People |
---|
article
Microwave complex permittivity of voltage-tunable nematic liquid crystals measured in high resistivity silicon transducers
Abstract
A split post dielectric resonator is used to determine the effect of AC bias voltage on the microwave complex permittivity of nematic liquid crystals. High resistivity silicon transducers separated by 100 μm are bridged by nematic liquid crystals and their properties determined. The in-plane permittivity of liquid crystals can be effectively tuned (change of effective permittivity of up to 8%) by increasing the AC bias voltage from 0 to 6 V. Using high resistivity silicon allowed us to obtain tunable dielectric stacks with relatively small dielectric losses at microwave frequencies.