Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Denlinger, J. D.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (5/5 displayed)

  • 2013Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxy29citations
  • 2010Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV17citations
  • 2010Full multiple scattering analysis of XANES at the Cd L3 and OK edges in CdO films combined with a soft-x-ray emission investigation40citations
  • 2009Highly mismatched crystalline and amorphous GaN1-x As x alloys in the whole composition range63citations
  • 2006Structure and electronic properties of InN and In-rich group III-nitride alloys237citations

Places of action

Chart of shared publication
Detert, D.
1 / 1 shared
Zhao, R.
1 / 2 shared
Walukiewicz, W.
5 / 87 shared
Foxon, C. T.
3 / 36 shared
Sarney, W. L.
1 / 8 shared
Svensson, S. P.
1 / 8 shared
Dubon, O. D.
1 / 40 shared
Novikov, S. V.
3 / 22 shared
Hawkridge, M.
1 / 5 shared
Liliental-Weber, Z.
3 / 25 shared
Luckert, F.
2 / 3 shared
Martin, R. W.
2 / 11 shared
Kao, V. M.
1 / 2 shared
Staddon, C. R.
1 / 7 shared
Demchenko, I.
1 / 2 shared
Broesler, R.
2 / 8 shared
Olalde-Velasco, P.
1 / 2 shared
Hemmers, O.
1 / 1 shared
Chernyshova, M.
1 / 16 shared
Speaks, D. T.
1 / 1 shared
Lawniczak-Jablonska, K.
1 / 1 shared
Derkachova, A.
1 / 1 shared
Demchenko, I. N.
2 / 3 shared
Jones, R. E.
1 / 8 shared
Wu, J.
1 / 56 shared
Li, S. X.
1 / 5 shared
Jr., J. W. Ager
1 / 1 shared
Chart of publication period
2013
2010
2009
2006

Co-Authors (by relevance)

  • Detert, D.
  • Zhao, R.
  • Walukiewicz, W.
  • Foxon, C. T.
  • Sarney, W. L.
  • Svensson, S. P.
  • Dubon, O. D.
  • Novikov, S. V.
  • Hawkridge, M.
  • Liliental-Weber, Z.
  • Luckert, F.
  • Martin, R. W.
  • Kao, V. M.
  • Staddon, C. R.
  • Demchenko, I.
  • Broesler, R.
  • Olalde-Velasco, P.
  • Hemmers, O.
  • Chernyshova, M.
  • Speaks, D. T.
  • Lawniczak-Jablonska, K.
  • Derkachova, A.
  • Demchenko, I. N.
  • Jones, R. E.
  • Wu, J.
  • Li, S. X.
  • Jr., J. W. Ager
OrganizationsLocationPeople

article

Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxy

  • Denlinger, J. D.
  • Detert, D.
  • Zhao, R.
  • Walukiewicz, W.
  • Foxon, C. T.
  • Sarney, W. L.
  • Svensson, S. P.
  • Dubon, O. D.
  • Novikov, S. V.
Abstract

We have grown N-rich, dilute Sb GaN<sub>1-x</sub>Sb<sub>x</sub> alloys by low temperature molecular beam epitaxy. At low growth temperature of 4 at. . Despite the different microstructures found for GaN<sub>1-x</sub>Sb<sub>x</sub> alloys with different composition, the absorption edge shifts continuously from 3.4 eV (GaN) to close to 1 eV for samples with Sb content &gt;30 at.%. GaN <sub>1-x</sub>Sb<sub>x</sub> alloys with less than 5 at.% Sb show sufficient bandgap reduction (∼2 eV), making them suitable for photoelectrochemical applications. © 2013 American Institute of Physics.

Topics
  • microstructure
  • laser emission spectroscopy