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Homeyer, Estelle
Institut Lumière Matière
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Topics
Publications (4/4 displayed)
- 2013Enhanced light extraction from InGaN/GaN quantum wells with silver gratingscitations
- 2006Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
- 2006Influence of the number of quantum dots stacks on the threshold current density of 1.55 µm InAs/InP(311)B semiconductor lasers
- 2005Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
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article
Enhanced light extraction from InGaN/GaN quantum wells with silver gratings
Abstract
We demonstrate that an extraction enhancement by a factor of 2.8 can be obtained for a GaN quantum well structure using metallic nanostructures, compared to a flat semiconductor. The InGaN/GaN quantum well is inserted into a dielectric waveguide, naturally formed in the structure, and a silver grating is deposited on the surface and covered with a polymer film. The polymer layer greatly improves the extraction compared to a single metallic grating. The comparison of the experiments with simulations gives strong indications on the key role of weakly guided modes in the polymer layer diffracted by the grating.