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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Klemradt, U.
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Publications (6/6 displayed)
- 2020In situ X-ray measurements over large Q-space to study the evolution of oxide thin films prepared by RF sputter depositioncitations
- 2015A compact and low-weight sputtering unit for in situ investigations of thin film growth at synchrotron radiation beamlinescitations
- 2013Feasibility studies for filament detection in resistively switching SrTiO3 devices by employing grazing incidence small angle X-ray scatteringcitations
- 2013Feasibility studies for filament detection in resistively switching $SrTiO_{3}$ devices by employing grazing incidence small angle X-ray scatteringcitations
- 2012Monitoring of Heat Treatment Processes by High Energy Synchrotron Radiation
- 2012Quenching and Partitioning - An in-situ approach to characterize the process kinetics and the final microstructurecitations
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article
Feasibility studies for filament detection in resistively switching SrTiO3 devices by employing grazing incidence small angle X-ray scattering
Abstract
<p>We report on fundamental studies of grazing incidence small angle X-ray scattering (GISAXS) on resistively switching SrTiO<sub>3</sub> thin film metal-insulator-metal (MIM) devices. Different influence factors on the GISAXS scattering pattern, e.g., surface morphology and top electrode material, were evaluated by simulations and compared with subsequent measurements. Pt top electrodes cause a strong background scattering which covers any information from the underlying SrTiO<sub>3</sub> layer. In order to reduce this undesired background scattering, the lighter elements Al and Ti have been used. In case of Ti top electrodes, we observed that a laterally formed structure occurs in the SrTiO<sub>3</sub> prior to any electrical treatment, which is consistent with the forming-free properties of the MIM structures. For Al top electrodes, we could detect a significant influence of an electroforming step on the scattered intensity.</p>