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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Sarath Kumar, S. R.
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Publications (7/7 displayed)
- 2013Ultraviolet laser deposition of graphene thin films without catalytic layerscitations
- 2013Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin filmscitations
- 2013In situ growth of p and n-type graphene thin films and diodes by pulsed laser depositioncitations
- 2012Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin filmscitations
- 2012Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometrycitations
- 2012Enhanced carrier density in Nb-doped SrTiO3 thermoelectricscitations
- 2011Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin filmscitations
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article
Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films
Abstract
We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.