693.932 PEOPLE
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| Naji, M. |
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| Aletan, Dirar |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Azevedo, Nuno Monteiro |
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Massabuau, Fcp
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2024Constant Photocurrent Method to Probe the Sub-Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α-Ga 2 O 3
- 2021Defect structures in (001) zincblende GaN/3CSiC nucleation layerscitations
- 2021Defect structures in (001) zincblende GaN/3C-SiC nucleation layerscitations
- 2021Directly correlated microscopy of trench defects in InGaN quantum wellscitations
- 2020Piezoelectric III-V and II-VI semiconductorscitations
- 2020Integrated wafer scale growth of single crystal metal films and high quality graphenecitations
- 2020Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etchingcitations
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3CSiC/Si substratescitations
- 2019Thick adherent diamond films on AlN with low thermal barrier resistancecitations
- 2019Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer depositioncitations
- 2017Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
- 2017X-ray diffraction analysis of cubic zincblende III-nitrides
- 2017Dislocations in AlGaN: core structure, atom segregation, and optical propertiescitations
- 2014Structure and strain relaxation effects of defects in InxGa1-xN epilayerscitations
- 2014Structure and strain relaxation effects of defects in In x Ga 1-x N epilayers
- 2013Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wellscitations
- 2012Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structurescitations
- 2011The effects of Si doping on dislocation movement and tensile stress in GaN filmscitations
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article
Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
Abstract
<p>In a wide variety of InGaN/GaN quantum well (QW) structures, defects are observed which consist of a trench partially or fully enclosing a region of the QW having altered emission properties. For various different defect morphologies, cathodoluminescence studies suggest that the emission is redshifted in the enclosed region. Based on transmission electron microscopy and atomic force microscopy data, we suggest that the sub-surface structure of the trench defect consists of a basal plane stacking fault bounded by a stacking mismatch boundary, which terminates at the apex of a V-shaped trench.</p>