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Jiang, Nian
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2013Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimizationcitations
- 2013III-V semiconductor nanowires for optoelectronic device applicationscitations
- 2012Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowirescitations
- 2012Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
- 2012Long minority carrier lifetime in Au-catalyzed GaAs/Al xGa 1-xAs core-shell nanowirescitations
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article
Long minority carrier lifetime in Au-catalyzed GaAs/Al xGa 1-xAs core-shell nanowires
Abstract
<p>GaAs/Al <sub>x</sub>Ga <sub>1-x</sub>As core-shell nanowires were grown by metal organic chemical vapor deposition with optimized Al <sub>x</sub>Ga <sub>1-x</sub>As shell and twin-free Au-catalyzed GaAs cores. Time-resolved photoluminescence measurements were carried out on single nanowires at room temperature, revealing minority carrier lifetimes of 1.02 ± 0.43 ns, comparable to self-assisted nanowires grown by molecular beam epitaxy. The long minority carrier lifetimes are mainly attributed to improvement of the GaAs/Al <sub>x</sub>Ga <sub>1-x</sub>As interface quality. The upper limit of surface recombination velocity of the structure is calculated to be 1300 cm/s with the Al <sub>x</sub>Ga <sub>1-x</sub>As shell grown at 750 °C, which is comparable with planar double heterostructures.</p>