| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nayan, Nafarizal
Laboratoire Bourguignon des Matériaux et Procédés
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2023Analysis of the Anticorrosion Performance and Antibacterial Efficacy of Ti-Based Ceramic Coatings for Biomedical Applicationscitations
- 2021Synthesis, characterization and biophysical evaluation of the 2D Ti2CTx MXene using 3D spheroid-type culturescitations
- 2019Effects of Laser Radiation on the Optical and Electrical Properties of ITO Thin Films Deposited by RF Sputteringcitations
- 2019Photochemical reduction of carbonyl group of polyimide by 450 nm diode laser
- 2018Reduced graphene oxide-multiwalled carbon nanotubes hybrid film with low Pt loading as counter electrode for improved photovoltaic performance of dye-sensitised solar cellscitations
- 2018Difference in structural and chemical properties of sol–gel spin coated Al doped TiO2, Y doped TiO2 and Gd doped TiO2 based on trivalent dopantscitations
- 2017The influence of N2 flow rate on Ar and Ti Emission in high-pressure magnetron sputtering system plasmacitations
- 2016Sputter Deposition of Cuprous and Cupric Oxide Thin Films Monitored by Optical Emission Spectroscopy for Gas Sensing Applicationscitations
- 2016Correlation between Microstructure of Copper Oxide Thin Films and its Gas Sensing Performance at Room Temperaturecitations
- 2015Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabricationcitations
- 2015Fabrication of inverted bulk heterojunction organic solar cells based on conjugated P3HT:PCBM using various thicknesses of ZnO buffer layercitations
- 2015Influence of TiO2 thin film annealing temperature on electrical properties synthesized by CVD technique
- 2014Glass etching for cost-effective microchannels fabricationcitations
- 2014Physical and optical studies on ZnO films by SOL-GELcitations
- 2014Fabrication and Characterisation of the Electrical and Physical Properties of the Mask Printed Graphite Paste Electrodes on Paper Substratescitations
- 2013Oxide semiconductors for solar to chemical energy conversion: nanotechnology approachcitations
- 2013Biophysical characteristics of cells cultured on cholesteryl ester liquid crystals.citations
- 2013Morphology, topography and thickness of copper oxide thin films deposited using magnetron sputtering techniquecitations
- 2012Characterization of TiAlBN nanocomposite coating deposited via radio frequency magnetron sputtering using single hot-pressed targetcitations
- 2012Plasma properties of RF magnetron sputtering system using Zn targetcitations
- 2012Sol-gel Synthesis of TiO 2 Thin Films from In-house Nano-TiO 2 Powder
- 2012Corrosion Behavior of AZ91 Mg-Alloy Coated with AlN and TiN in NaCl and Hank's Solutioncitations
- 2010Structural and Electrical Properties of TiO2 Thin Film Derived from Sol-gel Method using Titanium (IV) Butoxide
- 2010Optimization of RF magnetron sputtering plasma using Zn targetcitations
Places of action
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document
Plasma properties of RF magnetron sputtering system using Zn target
Abstract
In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6×109 to 1×1010cm−3 when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.