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Hueting, Raymond
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024A Systematic Comparison Study of Different Bonding Technologies for Large Substrate Attachment of Power Electronics
- 2020Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaNcitations
- 2015Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systemscitations
- 2014Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrodecitations
- 2012Extraction of second order piezoelectric parameters in bulk acoustic wave resonatorscitations
- 2011On the rule of thumb for flipping the dispersion relation in BAW devicescitations
- 2011Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitridecitations
- 2010BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substratescitations
- 2008The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates
- 2007Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies
- 2006Electrical characterization of thin film ferroelectric capacitors
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article
Extraction of second order piezoelectric parameters in bulk acoustic wave resonators
Abstract
In this paper we demonstrate a method to extract the electric field dependence of first order piezoelectric parameters. We fit the Mason model to measured frequency dependent electrical impedance data of aluminum-nitride bulk acoustic wave resonators for various DC biasing. The impedance was fitted accurately at the mechanical resonances and in the quasi-static regime well below the resonance frequency. This revealed the dependence of the piezoelectric stiffness, charge constant, and permittivity on the electric field. From this the four second order piezoelectric parameters were calculated.