| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Talbot, Etienne
Groupe de Physique des Matériaux
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2023Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser
- 2022Nano-composite MOx materials for NVMscitations
- 2019Growth and properties of doped silicon nanocrystals
- 2018Origin of Pr 3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigationscitations
- 2015Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameterscitations
- 2013Nanoscale evidence of erbium clustering in Er-doped silicon-rich silicacitations
- 2012Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicatescitations
Places of action
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article
Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates
Abstract
International audience ; Hafnium silicate films were fabricated by RF reactive magnetron sputtering technique. Fine microstructural analyses of the films were performed by means of high-resolution transmission electron microscopy and atom probe tomography. A thermal treatment of as-grown homogeneous films leads to a phase separation process. The formation of SiO2 and HfO2 phases as well as pure Si one was revealed. This latter was found to be amorphous Si nanoclusters, distributed uniformly in the film volume. Their mean diameter and density were estimated to be about 2.8 nm and (2.960.4) 1017 Si-ncs/cm3, respectively. The mechanism of the decomposition process was proposed. The obtained results pave the way for future microelectronic and photonic applications of Hf-based high-j dielectrics with embedded Si nanoclusters