| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Perez De La Cruz, Jp
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2017Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin filmscitations
- 2014Structural, electrical and magnetic properties of magnetoelectric GdMnO3 thin films prepared by a sol-gel methodcitations
- 2013Room temperature structure and multiferroic properties in Bi0.7La0.3FeO3 ceramicscitations
- 2013Influence of Process Parameters on the RF Sputtered GaP Thin Filmscitations
- 2012Properties of multilayer composite thin films based on morphotropic phase boundary Pb(Mg1/3Nb2/3)O-3-PbTiO3citations
- 2012Structural and electrical properties of LuMnO3 thin film prepared by chemical solution methodcitations
- 2012Low-temperature dielectric response of NaTaO3 ceramics and filmscitations
- 2011The influence of argon pressure and RF power on the growth of InP thin filmscitations
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article
Low-temperature dielectric response of NaTaO3 ceramics and films
Abstract
In this work, NaTaO3 ceramics are prepared by conventional mixed oxide method and NaTaO3 films are deposited by RF magnetron sputtering on Si/SiO2/TiO2/Pt substrates. The dielectric response of the obtained NaTaO3 ceramics and films is analyzed as a function of frequency and temperature. Between 1 kHz and 1MHz, the dielectric permittivity of NaTaO3 ceramics is frequency independent and increases on cooling up to similar to 324, which is the highest value ever reported for NaTaO3 ceramics. In contrast, NaTaO3 films exhibit a dielectric relaxation between similar to 20 and 30K, following the Arrhenius law with activation energy similar to 51 meV and pre-exponential term similar to 10(-15) s and attributed to polaron hopping. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714527]