693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Sarath Kumar, S. R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2013Ultraviolet laser deposition of graphene thin films without catalytic layerscitations
- 2013Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin filmscitations
- 2013In situ growth of p and n-type graphene thin films and diodes by pulsed laser depositioncitations
- 2012Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin filmscitations
- 2012Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometrycitations
- 2012Enhanced carrier density in Nb-doped SrTiO3 thermoelectricscitations
- 2011Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin filmscitations
Places of action
| Organizations | Location | People |
|---|
article
Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films
Abstract
The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO3 (SLTO) thin films epitaxially grown on LaAlO3 〈100〉 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K−1 m−1 has been achieved at 636 K for a filmdeposited using the highest laser fluence of 7 J cm−2 pulse−1.