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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schubert, M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVDcitations
- 2019Spider Chitin. The biomimetic potential and applications of Caribena versicolor tubular chitincitations
- 2018Multifunctional and lightweight load-bearing composite structures for satellitescitations
- 2018Development and design of multifunctional lightweight structures for satellite applications
- 2017Multifunctional load carrying lightweight structures for space design
- 2016Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)citations
- 2015Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)citations
- 2014Chain-growth polycondensation of perylene diimide-based copolymers
- 2014Chain-growth polycondensation of perylene diimide-based copolymers: a new route to regio-regular perylene diimide-based acceptors for all-polymer solar cells and n-type transistorscitations
- 2014Effect of Mg doping on the structural and free-charge carrier properties of InNcitations
- 2013Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effectcitations
- 2012Characterization of a Spent Ru/C Catalyst after Gasification of Biomass in Supercritical Watercitations
- 2011Chemical and optical characterisation of atomic layer deposition aluminium doped ZnO films for photovoltaics by glow discharge optical emission spectrometrycitations
- 2009Nanocrystalline microstructure of mechanically alloyed MgB<inf>2</inf> superconductor precursor powder for bulk and tape fabrication and implications on the superconductivity
- 2004Critical current densities of superconducting MgB<inf>2</inf> tapes prepared on the base of mechanically alloyed precursorscitations
- 2000<i>In situ</i> ellipsometry growth characterization of dual ion beam deposited boron nitride thin filmscitations
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article
<i>In situ</i> ellipsometry growth characterization of dual ion beam deposited boron nitride thin films
Abstract
<jats:p>Pure hexagonal h, as well as mixed-phase cubic/hexagonal c/h boron nitride (BN) thin films were deposited onto [001] silicon substrates using the dual ion beam deposition technique. The BN thin films were grown under UHV conditions at different substrate temperatures and ion beam bombarding parameters. Thin-film growth was monitored using in situ spectroscopic ellipsometry at 44 wavelengths between 420 and 761 nm. The in situ ellipsometric Ψ and Δ data were compared with two-layer growth model calculations for the mixed-phase c/h BN, and with one-layer growth model calculations for pure h-BN growth. In situ data provide information on the optical properties of deposited h-BN and c/h-BN material, film thickness, and BN growth rates. A virtual interface approach is employed for the optical properties of the silicon substrate. The growth and nucleation of c-BN observed here confirms the cylindrical thermal spike model. The results for composition and thickness of the BN films were compared to those obtained from ex situ infrared transmission measurements and high-resolution transmission electron microscopy investigations.</jats:p>