| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hjort, Martin
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2017Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowirescitations
- 2015Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogencitations
- 2015Surface morphology of Au-free grown nanowires after native oxide removal.citations
- 2014III–V Nanowire Surfaces
- 2013Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)citations
- 2012Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substratescitations
- 2011Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopycitations
- 2011Doping profile of InP nanowires directly imaged by photoemission electron microscopycitations
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article
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Abstract
The influence of InAs orientations and high-k oxide deposition conditions on the electrical and<br/> structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated<br/> using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results<br/> suggest that the interface traps around the conduction band edge are correlated to the As-oxide<br/> amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide<br/> determines the border trap density, hence the capacitance frequency dispersion. The comparison of<br/> different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B<br/> substrates followed by an annealing procedure at 400 oC.