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Timm, Rainer
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealingcitations
- 2023Bimolecular Reaction Mechanism in the Amido Complex-Based Atomic Layer Deposition of HfO2citations
- 2023A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)citations
- 2023A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)citations
- 2023Low temperature atomic hydrogen annealing of InGaAs MOSFETscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2022Oxygen relocation during HfO2 ALD on InAscitations
- 2022Nanometric Moiré Stripes on the Surface of Bi2Se3Topological Insulatorcitations
- 2022Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)citations
- 2022Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)citations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO 2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studiescitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAscitations
- 2019GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopycitations
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2018InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer depositioncitations
- 2017Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowirescitations
- 2015Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogencitations
- 2015Surface morphology of Au-free grown nanowires after native oxide removal.citations
- 2013Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)citations
- 2013Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
- 2012Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substratescitations
- 2011Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopycitations
- 2011Doping profile of InP nanowires directly imaged by photoemission electron microscopycitations
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article
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Abstract
The influence of InAs orientations and high-k oxide deposition conditions on the electrical and<br/> structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated<br/> using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results<br/> suggest that the interface traps around the conduction band edge are correlated to the As-oxide<br/> amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide<br/> determines the border trap density, hence the capacitance frequency dispersion. The comparison of<br/> different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B<br/> substrates followed by an annealing procedure at 400 oC.