693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tuomisto, Filip
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (44/44 displayed)
- 2024Suppression of helium migration in arc-melted and 3D-printed CoCrFeMnNi high entropy alloycitations
- 2024Suppression of helium migration in arc-melted and 3D-printed CoCrFeMnNi high entropy alloycitations
- 2024Solubility of Hydrogen in a WMoTaNbV High-Entropy Alloycitations
- 2023Hydrogen isotope exchange experiments in high entropy alloy WMoTaNbVcitations
- 2022Irradiation Damage Independent Deuterium Retention in WMoTaNbVcitations
- 2021Properties of HPT-Processed Large Bulks of p-Type Skutterudite DD0.7Fe3CoSb12 with ZT > 1.3citations
- 2021Identification of Point Defects in Multielement Compounds and Alloys with Positron Annihilation Spectroscopycitations
- 2020Segregation of Ni at early stages of radiation damage in NiCoFeCr solid solution alloyscitations
- 2020Ti-Sr antisitecitations
- 2020Ti-Sr antisite : An abundant point defect in SrTiO3citations
- 2019Ga vacancies and electrical compensation in beta-Ga2O3 thin films studied with positron annihilation spectroscopycitations
- 2019Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopycitations
- 2018Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin filmscitations
- 2018Hydrogen-induced strain localisation in oxygen-free copper in the initial stage of plastic deformationcitations
- 2017Detector resolution in positron annihilation Doppler broadening experimentscitations
- 2017Positron annihilation analysis of the atomic scale changes in oxidized Zircaloy-4 samplescitations
- 2017Effects of grain size and deformation temperature on hydrogen-enhanced vacancy formation in Ni alloyscitations
- 2016Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductorscitations
- 2016Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germaniumcitations
- 2015Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspectscitations
- 2015Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C-60citations
- 2015Role of excessive vacancies in transgranular stress corrosion cracking of pure coppercitations
- 2015Advanced techniques for characterization of ion beam modified materialscitations
- 2014Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloyscitations
- 2014Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALDcitations
- 2013Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloyscitations
- 2012Matter-positronium interactioncitations
- 2012Low energy electron beam induced vacancy activation in GaNcitations
- 2012Tailoring the Chain Packing in Ultrathin Polyelectrolyte Films Formed by Sequential Adsorptioncitations
- 2012Point defect evolution in low-temperature MOCVD growth of InNcitations
- 2012Interplay of native point defects with ZnO Schottky barriers and dopingcitations
- 2011Self-compensation in semiconductorscitations
- 2010Papers presented at the 2009 E-MRS Fall Meeting, Symposium H
- 2010Effect of hydrogen on plastic strain localization in single crystals of austenitic stainless steelcitations
- 2010Vacancy defects in bulk ammonothermal GaN crystalscitations
- 2009Effect of Hydrogen on Plastic Strain Localization in Single Crystals of Nickel and Austenitic Stainless Steel
- 2009Native vacancy defects in Zn1-x(Mn,Co)(x)GeAs2 studied with positron annihilation spectroscopycitations
- 2009Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layerscitations
- 2008Evidence of PPII-like helical conformation and glass transition in a self-assembled solid-state polypeptide-surfactant complexcitations
- 2007Hierarchical porosity in self-assemhled polymerscitations
- 2007Interplay of Ga vacancies, C impurities and yellow luminescence in GaNcitations
- 2007Hierarchical porosity in self-assemhled polymers:Post-modification of block copolymer-phenolic resin complexes hy pyrolysis allows the control of micro- and mesoporositycitations
- 2007Defect distribution in a-plane GaN on Al2O3citations
- 2006Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor depositioncitations
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article
Low energy electron beam induced vacancy activation in GaN
Abstract
Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V-Ga-H-n complexes that can be activated by H removal during low energy electron irradiation.