| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Kluth, S. M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation
Abstract
<p>Porous GaSb has been formed by Ga ion implantation into crystalline GaSb substrates at either room temperature or -180 C. The morphology has been characterized using scanning electron microscopy and the atomic structure was determined using extended x-ray absorption fine structure spectroscopy. Room-temperature implantation at low fluences leads to the formation of ∼20-nm voids though the material remains crystalline. Higher fluences cause the microstructure to evolve into a network of amorphous GaSb rods ∼15 nm in diameter. In contrast, implantation at -180 C generates large, elongated voids but no rods. Upon exposure to air, the surface of the porous material is readily oxidized yielding Ga <sub>2</sub>O <sub>3</sub> and metallic Sb precipitates, the latter resulting from the reduction of unstable Sb <sub>2</sub>O <sub>3</sub>. We consider and discuss the atomic-scale mechanisms potentially operative during the concurrent crystalline-to-amorphous and continuous-to-porous transformations.</p>