| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tougaard, Sven Mosbæk
University of Southern Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2022QUEELScitations
- 2020Optical properties of molybdenum in the ultraviolet and extreme ultraviolet by reflection electron energy loss spectroscopycitations
- 2020Universal inelastic electron scattering cross-section including extrinsic and intrinsic excitations in XPScitations
- 2017Optical properties and electronic transitions of zinc oxide, ferric oxide, cerium oxide, and samarium oxide in the ultraviolet and extreme ultravioletcitations
- 2016Determination of electronic properties of nanostructures using reflection electron energy loss spectroscopycitations
- 2016Quantitative spectromicroscopy from inelastically scattered photoelectrons in the hard X-ray rangecitations
- 2016Composition dependence of dielectric and optical properties of Hf-Zr-silicate thin films grown on Si(100) by atomic layer depositioncitations
- 2016Band-Gap Widening at the Cu(In,Ga)(S,Se)2 Surface:A Novel Determination Approach Using Reflection Electron Energy Loss Spectroscopycitations
- 2016Band-Gap Widening at the Cu(In,Ga)(S,Se)2 Surfacecitations
- 2016Quantitative analysis of reflection electron energy loss spectra to determine electronic and optical properties of Fe–Ni alloy thin filmscitations
- 2015Effects of cation compositions on the electronic properties and optical dispersion of indium zinc tin oxide thin films by electron spectroscopycitations
- 2014Electronic and optical properties of Fe, Pd, and Ti studied by reflection electron energy loss spectroscopycitations
- 2013Factor analysis and advanced inelastic background analysis in XPScitations
- 2013Surface excitation parameter for allotropic forms of carboncitations
- 2013Effects of gas environment on electronic and optical properties of amorphous indium zinc tin oxide thin filmscitations
- 2011Dielectric response functions of the (0001̄), (101̄3) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopycitations
- 2009Dielectric and optical properties of Zr silicate thin films grown on Si(100) by atomic layer depositioncitations
- 2008Test of validity of the V-type approach for electron trajectories in reflection electron energy loss spectroscopycitations
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article
Dielectric response functions of the (0001̄), (101̄3) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy
Abstract
Polar GaN (0001̄) (1 × 1), semipolar GaN (101̄3) surfaces prepared in NH 3 vapor, and their disordered counterparts are investigated by reflection electron energy loss spectroscopy (REELS) and low-energy electron diffraction. The REELS spectra are measured in a range of polar angles at electron kinetic energies of 200 and 1000 eV. The electron energy loss function is determined from the REELS within the framework of the semiclassical approach. Good agreement between experimental and theoretical functions is achieved at all angles for the disordered GaN surfaces and for the ordered surfaces measured at a kinetic energy of 1000 eV. The agreement is worse for the crystals measured at 200 eV, which is explained by the coherent scattering contributions at low energies. The optical constants of the GaN surfaces are derived from the computed dielectric functions: the optical properties of the (0001̄) and (101̄3) surfaces are similar, except for differences in bandgap values, which may be due to observed steps on the (101̄3) surface. The surface optical properties of a disordered GaN surface are found to be different from the GaN crystals. There are pronounced changes in the electronic band structure for disordered GaN due to the preferential sputtering of nitrogen.