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Iwamura, Yoshiaki
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Publications (2/2 displayed)
- 2011Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Alcitations
- 2011Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivationcitations
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article
Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation
Abstract
<jats:p>The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO2/GeO2 bilayer passivation. PMA at 450 °C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from −0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2/GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6×1011 to 2.5×1011 cm−2 eV−1, as results of the nitrogen termination of defects at the SiO2/GeO2 interface and/or in the GeO2 interlayer.</jats:p>