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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vasilevskiy, Mikhail
International Iberian Nanotechnology Laboratory
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2023The Role of Hydrogen Incorporation into Amorphous Carbon Films in the Change of the Secondary Electron Yieldcitations
- 2023The role of hydrogen incorporation into amorphous carbon films in the change of the secondary electron yieldcitations
- 2021Gas sensors based on localized surface plasmon resonances: synthesis of oxide films with embedded metal nanoparticles, theory and simulation, and sensitivity enhancement strategiescitations
- 2016Ag fractals formed on top of a porous TiO2 thin filmcitations
- 2016Broadband optical absorption caused by plasmonic response of coalesced Au nanoparticles embedded in a TiO2 matrixcitations
- 2015Raman study of insulating and conductive ZnO: (Al, Mn) thin filmscitations
- 2015Effect of clustering on the surface plasmon band in thin films of metallic nanoparticlescitations
- 2015Optical properties of zirconium oxynitride films: the effect of composition, electronic and crystalline structurescitations
- 2015Thin films composed of gold nanoparticles dispersed in a dielectric matrix: the influence of the host matrix on the optical and mechanical responsescitations
- 2014Optical response of fractal aggregates of polarizable particlescitations
- 2011ZnO:Cu thin films and p-n homojunctions grown by electrochemical deposition
- 2011Resonant raman scattering in CdSxSe1-x nanocrystals : effects of phonon confinement, composition and elastic straincitations
- 2011Study of the piezoresistivity of doped nanocrystalline silicon thin filmscitations
- 2003Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O-3 thin films deposited by sol-gelcitations
- 2002Microstructure and photoluminescence of CdS-doped silica films grown by RF magnetron sputtering
Places of action
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article
Study of the piezoresistivity of doped nanocrystalline silicon thin films
Abstract
The piezoresistive response of n- and p-type hydrogenated nanocrystalline silicon thin films, deposited by hot-wire (HW) and plasma-enhanced chemical vapor deposition (PECVD) on thermally oxidized silicon wafers, has been studied using four-point bending tests. The piezoresistive gauge factor (GF) was measured on patterned thin-film micro-resistors rotated by an angle θ with respect to the principal strain axis. Both longitudinal (GFL) and transverse (GFT) GFs, corresponding to θ = 0° and 90°, respectively, are negative for n-type and positive for p-type films. For other values of θ (30°, 45°, 120°, and 135°) GFs have the same signal as GFL and GFT and their value is proportional to the normal strain associated with planes rotated by θ relative to the principal strain axis. It is concluded that the films are isotropic in the growth plane since the GF values follow a Mohr’s circle with the principal axes coinciding with those of the strain tensor. The strongest p-type pirezoresistive response (GFL = 41.0, GFT = 2.84) was found in a film deposited by PECVD at a substrate temperature of 250 °C and working pressure of 0.250 Torr, with dark conductivity 1.6 Ω−1cm−1. The strongest n-type response (GFL =− 28.1, GFT =− 5.60) was found in a film deposited by PECVD at 150 °C and working pressure of 3 Torr, with dark conductivity 9.7 Ω−1cm−1. A model for the piezoresistivity of nc-Si is proposed, based on a mean-field approximation for the conductivity of an ensemble of randomly oriented crystallites and neglecting grain boundary effects. The model is able to reproduce the measured GFL values for both n- and p-type films. It fails, however, to explain the transversal GFT data. Both experimental and theoretical data show that nanocrystalline silicon can have an isotropic piezoresistive effect of the order of 40% of the maximum response of crystalline silicon. ; Fundação para a Ciência e a Tecnologia (FCT) - PTDC/CTM/66558/2006, bolsa de investigação SFRH/BSAB/883/2009