693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Reuther, Helfried
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2013Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shuntscitations
- 2012GaMnN epitaxial films with high magnetization
- 2011Reduced leakage current in BiFeO3 thin films with rectifying contactscitations
- 2008In-situ study of the preferential orientation of magnetron sputtered ni-ti thin films as a function of bias and substrate type
- 2008Study of graded Ni-Ti shape memory alloy film growth on Si(100) substratecitations
Places of action
| Organizations | Location | People |
|---|
article
Reduced leakage current in BiFeO3 thin films with rectifying contacts
Abstract
<p>BiFeO<sub>3</sub> thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present letter, we show that only the growth rate of the BiFeOv<sub>3</sub> films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.</p>