• Yamamoto, Keisuke
• Nakashima, Hiroshi
• Yang, Haigui
• Iyota, Masatoshi

Abstract

<jats:p>We succeeded in Ohmic contact formation on an n-Ge substrate by direct sputter deposition from a TiN target and subsequent postmetallization annealing (PMA) at 350 °C. The Schottky barrier heights of the TiN/n-Ge and TiN/p-Ge contacts were 0.18 eV and 0.50 eV, respectively, and were maintained up to a PMA temperature of 550 °C. These electrical characteristics are likely to be associated with an approximately 1-nm-thick interlayer formed at a TiN/Ge interface, which leads to the alleviation of the Fermi level pinning. We demonstrated the validity of the TiN/n-Ge contact using an n+/p junction, which showed an excellent ideal factor of n=1.01.</jats:p>

Topics

• Deposition
• annealing
• tin