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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kovács, András
Forschungszentrum Jülich
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2023Current-driven writing process in antiferromagnetic Mn2Au for memory applicationscitations
- 2023Large Interfacial Rashba Interaction Generating Strong Spin–Orbit Torques in Atomically Thin Metallic Heterostructurescitations
- 2023Large interfacial Rashba interaction and resultant dominating field- like torque in atomically thin metallic heterostructurescitations
- 2023Role of heterophase interfaces on local coercivity mechanisms in the magnetic Al0.3CoFeNi complex concentrated alloycitations
- 2022Microstructure and Properties after Friction Stir Processing of Twin-Roll Cast Al–Mn–Cu–Be Alloycitations
- 2021Readout of an antiferromagnetic spintronics system by strong exchange coupling of Mn2Au and Permalloycitations
- 2020Unconventional magnetization textures and domain-wall pinning in Sm–Co magnetscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Electron holographycitations
- 2017Control of morphology and formation of highly geometrically confined magnetic skyrmionscitations
- 2015Electrostatic doping as a source for robust ferromagnetism at the interface between antiferromagnetic cobalt oxidescitations
- 2011Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn contentcitations
- 2011Amorphous Fe-B alloys in B-Fe-Ag multilayers studied by magnetization and Mössbauer measurementscitations
- 2011Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopycitations
- 2010Mapping boron in silicon solar cells using electron energy-loss spectroscopy
- 2010Mapping boron in silicon solar cells using electron energy-loss spectroscopy
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article
Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy
Abstract
Voids adjacent to cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in an annealed Ga0.995Mn0.005As magnetic semiconductor specimen grown by molecular beam epitaxy. Nanobeam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs. After annealing at 903 K, the magnetic transition temperature of the specimen is likely to be dominated by the presence of cubic ferromagnetic nanocrystals. In situ annealing inside the electron microscope is used to study the nucleation, coalescence, and grain growth of individual nanocrystals.