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Hartnett, John G.
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Publications (7/7 displayed)
- 2011Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperaturescitations
- 2010Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperaturescitations
- 2009Measurements of the complex permittivity and the complex permeability of low and medium loss isotropic and uniaxially anisotropic metamaterials at microwave frequenciescitations
- 2008Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode methodcitations
- 2004The microwave Characterization of Single Crystal Lithium and Calcium Fluoride at Cryogenic Temperaturescitations
- 2004The dependence of the permittivity of sapphire on thermal deformation at cryogenic temperaturescitations
- 2003Lithium tantalate - a high permittivity dielectric material for microwave communication systemscitations
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article
Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperatures
Abstract
The complex permittivity of high-purity, semi-insulating, axis-aligned monocrystalline 4H-SiC has been determined over the frequency range 10–40 GHz and at temperatures from 40 up to 295 K using whispering gallery modes and quasi TE0, n, p modes in a dielectric resonator constructed from seven layers of a 375 μm thick wafer. The real part of the permittivity (in the plane of the wafers) was found to be nearly independent of frequency. The dielectric loss tangent of 4H-SiC increases with temperature above 100 K. All results were obtained for the semiconductor in darkness.