Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
693.932 People People

693.932 People

Show results for 693.932 people that are selected by your search filters.

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PeopleLocationsStatistics
Naji, M.
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Iii, J. W. Ager

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (18/18 displayed)

  • 2012P-type InGaN across entire composition rangecitations
  • 2011Mg doped InN and confirmation of free holes in InN45citations
  • 2009Electrical and electrothermal transport in InN11citations
  • 2007Superheating and supercooling of Ge nanocrystals embedded in SiO 26citations
  • 2007Synthesis and optical properties of multiband III-V semiconductor alloys1citations
  • 2006Multiband GaNAsP quaternary alloys130citations
  • 2005Highly mismatched alloys for intermediate band solar cellscitations
  • 2005A chemical approach to 3-D lithographic patterning of Si and Ge nanocrystalscitations
  • 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloys6citations
  • 2004Group III-nitride alloys as photovoltaic materials10citations
  • 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys10citations
  • 2004Effect of oxygen on the electronic band structure of II-O-VI alloys1citations
  • 2004Characterization and manipulation of exposed Ge nanocrystalscitations
  • 2003Band-gap bowing effects in BxGa1-xAs alloys39citations
  • 2003Narrow bandgap group III-nitride alloys24citations
  • 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloys75citations
  • 2000Effect of nitrogen on the electronic band structure of group III-N-V alloyscitations
  • 2000Effect of nitrogen on the band structure of III-N-V alloyscitations

Places of action

Chart of shared publication
Alarcon-Llado, E.
1 / 4 shared
Mayer, M. A.
3 / 5 shared
Walukiewicz, W.
15 / 87 shared
Wang, K.
2 / 27 shared
Nanishi, Y.
2 / 9 shared
Araki, T.
2 / 8 shared
Sakaguchi, J.
1 / 1 shared
Katsuki, T.
1 / 3 shared
Iwamoto, R.
1 / 1 shared
Miller, N.
2 / 3 shared
Yamaguchi, T.
1 / 6 shared
Haller, E. E.
16 / 30 shared
Koblmüller, G.
1 / 3 shared
Liliental-Weber, Z.
2 / 25 shared
Iii, H. M. Smith
1 / 1 shared
Hawkridge, M. E.
1 / 2 shared
Gallinat, C.
1 / 1 shared
Jones, R. E.
2 / 8 shared
Speck, J. S.
1 / 2 shared
Schaff, W. J.
1 / 10 shared
Xu, Q.
3 / 11 shared
Glaeser, A. M.
1 / 1 shared
Yuan, C. W.
1 / 2 shared
Ridgway, M. C.
1 / 38 shared
Yi, D. O.
3 / 3 shared
Beeman, J. W.
4 / 21 shared
Chrzan, D. C.
3 / 6 shared
Sharp, I. D.
5 / 6 shared
Liao, C. Y.
3 / 6 shared
Minor, A. M.
1 / 10 shared
Dubon, O. D.
5 / 40 shared
Farshchi, R.
2 / 6 shared
Li, S. X.
3 / 5 shared
Bour, D.
1 / 1 shared
Scrapulla, M. A.
1 / 1 shared
Wu, J.
8 / 56 shared
Becla, P.
2 / 6 shared
Shan, W.
8 / 16 shared
Dubón, O. D.
1 / 2 shared
Robinson, J. T.
1 / 1 shared
Nabetani, Y.
3 / 3 shared
Lu, Hai
2 / 5 shared
Schaff, William J.
2 / 5 shared
Scarpulla, M. A.
1 / 23 shared
Scapulla, M. A.
1 / 1 shared
Beeman, J.
1 / 1 shared
Zakharov, D. N.
1 / 3 shared
Kurtz, Sarah R.
3 / 3 shared
Friedman, D. J.
3 / 6 shared
Qeisz, J. F.
1 / 1 shared
Matsumoto, T.
1 / 6 shared
Ito, Y.
1 / 11 shared
Mukawa, T.
1 / 1 shared
Nauka, C.
1 / 1 shared
Geisz, J. F.
2 / 6 shared
Olson, J. M.
2 / 2 shared
Xin, H. P.
1 / 1 shared
Tu, C. W.
1 / 8 shared
Chart of publication period
2012
2011
2009
2007
2006
2005
2004
2003
2000

Co-Authors (by relevance)

  • Alarcon-Llado, E.
  • Mayer, M. A.
  • Walukiewicz, W.
  • Wang, K.
  • Nanishi, Y.
  • Araki, T.
  • Sakaguchi, J.
  • Katsuki, T.
  • Iwamoto, R.
  • Miller, N.
  • Yamaguchi, T.
  • Haller, E. E.
  • Koblmüller, G.
  • Liliental-Weber, Z.
  • Iii, H. M. Smith
  • Hawkridge, M. E.
  • Gallinat, C.
  • Jones, R. E.
  • Speck, J. S.
  • Schaff, W. J.
  • Xu, Q.
  • Glaeser, A. M.
  • Yuan, C. W.
  • Ridgway, M. C.
  • Yi, D. O.
  • Beeman, J. W.
  • Chrzan, D. C.
  • Sharp, I. D.
  • Liao, C. Y.
  • Minor, A. M.
  • Dubon, O. D.
  • Farshchi, R.
  • Li, S. X.
  • Bour, D.
  • Scrapulla, M. A.
  • Wu, J.
  • Becla, P.
  • Shan, W.
  • Dubón, O. D.
  • Robinson, J. T.
  • Nabetani, Y.
  • Lu, Hai
  • Schaff, William J.
  • Scarpulla, M. A.
  • Scapulla, M. A.
  • Beeman, J.
  • Zakharov, D. N.
  • Kurtz, Sarah R.
  • Friedman, D. J.
  • Qeisz, J. F.
  • Matsumoto, T.
  • Ito, Y.
  • Mukawa, T.
  • Nauka, C.
  • Geisz, J. F.
  • Olson, J. M.
  • Xin, H. P.
  • Tu, C. W.
OrganizationsLocationPeople

article

Mg doped InN and confirmation of free holes in InN

  • Iwamoto, R.
  • Mayer, M. A.
  • Walukiewicz, W.
  • Miller, N.
  • Wang, K.
  • Nanishi, Y.
  • Yamaguchi, T.
  • Araki, T.
  • Iii, J. W. Ager
  • Haller, E. E.
Abstract

We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type "window" the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted. © 2011 American Institute of Physics.

Topics
  • density
  • mobility