| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cros, Dominique
University of Limoges
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2021Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substratescitations
- 2021Hybridization of additive manufacturing processes to build ceramic/metal parts: Example of HTCCcitations
- 2020Hybridization of additive manufacturing processes to build ceramic/metal parts: Example of LTCCcitations
- 2016BST thin film capacitors integrated within a frequency tunable antenna
- 2014Intercomparison of Permittivity Measurement Techniques for Ferroelectric Thin Layerscitations
- 2011Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperaturescitations
- 2010Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperaturescitations
- 2010High permeability and high permittivity heterostructures for the miniaturization of Radiofrequency components
- 2010A 380-420 MHz Two Pole tunable filter using new ferroelectric composite capacitors
- 2009Filter Synthesis using Shear Wave Piezoelectric Layer Resonators
- 2009Magnetodielectric Thin Film Heterostructure With High Permeability and Permittivity
- 2008Characterization of materials and mode structure of high-Q resonators using Bragg confined modes
- 2008Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode methodcitations
- 2008Low-loss materials for high -factor Bragg reflector resonatorscitations
- 2007Pulsed laser deposition o aluminum nitride thin films for FBAR applicationscitations
- 2003Characterization of a spherically symmetric fused-silica-loaded cavity microwave resonatorcitations
Places of action
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article
Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperatures
Abstract
We report on extremely sensitive measurements of changes in the microwave properties of high purity nonintentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide, and 4H–silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors while they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.