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Tseng, A.
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article
GaN1-xBix
Abstract
Through nonequilibrium low-temperature molecular beam epitaxy, we have grown GaN<sub>1-x</sub>Bi<sub>x</sub> alloys on sapphire substrates with x up to 0.11. The GaN<sub>1-x</sub>Bi<sub>x</sub> alloys are found to be amorphous with GaN crystals distributed throughout the film. A dramatic reduction in the optical band gap from 3.4 eV in GaN to as low as 1.2 eV for x∼0.11 was qualitatively explained by formation of a narrow band originating from anticrossing interaction between Bi localized states and the extended states of the GaN matrix. © 2010 American Institute of Physics.