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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Michon, A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2020Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor depositioncitations
- 2020Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor depositioncitations
- 2017Design and properties of high-power highly-coherent single-frequency VECSEL emitting in the near- to mid-IR for photonic applications
- 2013Noise properties of NIR and MIR VeCSELscitations
- 2013Noise properties of NIR and MIR VECSELscitations
- 2013Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near- and mid-IRcitations
- 2012Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiCcitations
- 2011Single mode TEM <inf>00</inf> large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate
- 2011Design and properties of high-power highly-coherent single-frequency VECSEL emitting in the near-to mid-IR for photonic applicationscitations
- 2011Single InAs<inf>1-x</inf>P<inf>x</inf>/InP quantum dots as telecommunications-band photon sourcescitations
- 2010Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μmcitations
- 2010Engineering of InAsP/InP quantum dot emission for long-distance quantum communications
- 2009Single photon sources using InAs/InP quantum dotscitations
- 2008Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55 μm applications: Growth, structural, and optical propertiescitations
- 2008InAsP/InP(001) quantum dots emitting at 1.55 μm grown by metalorganic vapor phase epitaxy
- 2008Tuning InAs/InP(001) quantum dot emission from 1.55 TO 2 mu;m by varying cap-layer growth rate in metalorganic vapor phase epitaxy
- 2008Time-resolved characterization of InAsPInP quantum dots emitting in the C -band telecommunication windowcitations
- 2007Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(0 0 1) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxycitations
- 2007InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: Shape, anisotropy and formation process
- 2007Density of InAsInP (001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth ratescitations
- 2006Effect of cap-layer growth rate on morphology and luminescence of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxycitations
- 2006Microphotoluminescence of exciton and biexciton around 1.5 μm from a single InAsInP (001) quantum dotcitations
- 2006InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: Shape, anisotropy and formation process
- 2006Thermodynamical analysis of the shape and size dispersion of InAs InP (001) quantum dotscitations
- 2006Initial stage of the overgrowth of InP on InAs/InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edgescitations
- 2006Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in the InAs/InP (001) system: Experiment and theorycitations
- 2006Microphotoluminescence around 1.5 μm from a single InAs/InP(001) quantum dot grown by MOVPE
- 2006Nanoepitaxy of InAsInP quantum dots by metalorganic vapor phase epitaxy for 1.55 μm emitterscitations
- 2005InAs/InP (001) quantum dots emitting at 1.55 μm grown by low-pressure metalorganic vapor-phase epitaxycitations
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