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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Levander, A. X.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2013Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition rangecitations
- 2013Microstructure of Mg doped GaNAs alloyscitations
- 2012Structural studies of GaN 1-x As x and GaN 1-x Bi x alloys for solar cell applicationscitations
- 2011GaNAs alloys over the whole composition range grown on crystalline and amorphous substratescitations
- 2010GaN1-xBixcitations
- 2010Low gap amorphous GaN1-x Asx alloys grown on glass substratecitations
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article
Low gap amorphous GaN1-x Asx alloys grown on glass substrate
Abstract
Amorphous GaN<sub>1-x</sub> As<sub>x</sub> layers with As content in the range of x=0.1 to 0.6 were grown by molecular beam epitaxy on Pyrex glass substrate. These alloys exhibit a wide range of band gap values from 2.2 to 1.3 eV. We found that the density of the amorphous films is ∼0.8-0.85 of their corresponding crystalline value. These amorphous films have smooth morphology, homogeneous composition, and sharp well defined optical absorption edges. The measured band gap values for the crystalline and amorphous GaN<sub>1-x</sub> As<sub>x</sub> alloys are in excellent agreement with the predictions of the band anticrossing model. The high absorption coefficient of ∼ 105cm-1 for the amorphous GaN<sub>1-x</sub> As<sub>x</sub> films suggests that relatively thin films (on the order of 1 μm) are necessary for photovoltaic application. © 2010 American Institute of Physics.