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Hedhili, Mohamed Nejib
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- 2023Anisotropic Superconducting Nb<sub>2</sub>CT<i><sub>x</sub></i> MXene Processed by Atomic Exchange at The Wafer Scalecitations
- 2015Mechanistic Insight into the Stability of HfO<inf>2</inf>-Coated MoS<inf>2</inf> Nanosheet Anodes for Sodium Ion Batteriescitations
- 2014Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayerscitations
- 2014Influence of stacking morphology and edge nitrogen doping on the dielectric performance of graphene-polymer nanocompositescitations
- 2010Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin filmscitations
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article
Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films
Abstract
Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.