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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Moret, Matthieu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barrierscitations
- 2022Determination of the direct bandgap value in In4Se3 thin filmscitations
- 2017Study of $Cu_{2}O{backslash}ZnO$ nanowires heterojunction designed by combining electrodeposition and atomic layer depositioncitations
- 2015Growth, structure and optoelectronic characterizations of high quality Cu2ZnSnS4 thin films obtained by close spaced vapor transportcitations
- 2014Atomic Layer Deposition of zinc oxide for solar cell applicationscitations
- 2010Pressure cycling of InN to 20 GPa: In situ transport properties and amorphizationcitations
- 2010Pressure cycling of InN to 20 GPa: In situ transport properties and amorphizationcitations
- 2003High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications.
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article
Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization
Abstract
Indium nitride was grown on Al2O3 substrate and characterized by x-ray diffraction, Raman, electrical resistivity, Hall, and magnetoresistance studies. Thermoelectric and electrical properties of free-standing films were measured in situ under high pressure HP cycling to 20 GPa, across a phase transformation to a rock-salt-structured lattice. HP-cycling-induced amorphization was established. The thermopower Seebeck effect data evidence that both crystalline and amorphous InN kept n-type conductivity to 20 GPa. Pressure effect on the carrier concentration and effective mass is analyzed. Two features that can be related to structural transitions in amorphous InN were found near 11 and 17 GPa.