| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sugiyama, Masakazu
in Cooperation with on an Cooperation-Score of 37%
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Publications (3/3 displayed)
- 2019MIS Structures for Solar Cells Perimeter Passivation
- 2010High Quality Thin Body III-V-On-Insulator Channel Layer Transfer on Si Wafer Using Direct Wafer Bondingcitations
- 2010III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interfacecitations
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article
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface
Abstract
<jats:p>We have developed III-V-semiconductor-on-insulator (III-V-OI) structures on Si wafers with excellent bottom interfaces between In0.53Ga0.47As-OI channel layers and atomic-layer-deposited Al2O3 (ALD-Al2O3) buried oxides (BOXs). A surface activated bonding process and the sulfur passivation pretreatment have realized the excellent In0.53Ga0.47As-OI/ALD-Al2O3 BOX bottom interface properties. As a result, the III-V-OI n-channel metal-insulator-semiconductor field-effect transistors under the back-gate configuration showed the peak mobility of 1800 cm2/V s and the higher electron mobility than the Si universal one even in the high effective electric field range because of the reduction in the surface roughness and fixed charges.</jats:p>