| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Takenaka, Mitsuru
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022(Digital Presentation) Ge-on-insulator Platform for Mid-infrared Photonic Integrated Circuitscitations
- 2019InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bondingcitations
- 2015Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bondingcitations
- 2014Study on electrical properties of metal/GaSb junctions using metal-GaSb alloyscitations
- 2012Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface propertiescitations
- 2010High Quality Thin Body III-V-On-Insulator Channel Layer Transfer on Si Wafer Using Direct Wafer Bondingcitations
- 2010(Invited) III-V-On-Insulator MOSFETs on Si Substrates Fabricated by Direct Bonding Techniquecitations
- 2010III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interfacecitations
Places of action
| Organizations | Location | People |
|---|
article
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface
Abstract
<jats:p>We have developed III-V-semiconductor-on-insulator (III-V-OI) structures on Si wafers with excellent bottom interfaces between In0.53Ga0.47As-OI channel layers and atomic-layer-deposited Al2O3 (ALD-Al2O3) buried oxides (BOXs). A surface activated bonding process and the sulfur passivation pretreatment have realized the excellent In0.53Ga0.47As-OI/ALD-Al2O3 BOX bottom interface properties. As a result, the III-V-OI n-channel metal-insulator-semiconductor field-effect transistors under the back-gate configuration showed the peak mobility of 1800 cm2/V s and the higher electron mobility than the Si universal one even in the high effective electric field range because of the reduction in the surface roughness and fixed charges.</jats:p>