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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Denlinger, J. D.
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Publications (5/5 displayed)
- 2013Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxycitations
- 2010Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eVcitations
- 2010Full multiple scattering analysis of XANES at the Cd L3 and OK edges in CdO films combined with a soft-x-ray emission investigationcitations
- 2009Highly mismatched crystalline and amorphous GaN1-x As x alloys in the whole composition rangecitations
- 2006Structure and electronic properties of InN and In-rich group III-nitride alloyscitations
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article
Highly mismatched crystalline and amorphous GaN1-x As x alloys in the whole composition range
Abstract
Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general, formed of component elements that are well matched in terms of ionicity, atom size, and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN<sub>1-x</sub> As<sub>x</sub>, a highly mismatched, immiscible alloy system that was successfully synthesized in the whole composition range using a nonequilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.17<x0.2, and to the upward movement of the valence band for alloys with x1-x As<sub>x</sub> alloys for various types of solar power conversion devices. © 2009 American Institute of Physics.