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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Durose, Ken
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2021Identification of lead vacancy defects in lead halide perovskitescitations
- 2020Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxycitations
- 2020Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics
- 2019Chemical etching of Sb2Se3 solar cells: surface chemistry and back contact behaviourcitations
- 2019Chemical etching of Sb2Se3 solar cellscitations
- 2018Self-catalyzed CdTe wirescitations
- 2010Control of grain size in sublimation-grown CdTe, and the improvement in performance of devices with systematically increased grain sizecitations
- 2009Impedance spectroscopy of thin-film CdTe/CdS solar cells under varied illuminationcitations
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article
Impedance spectroscopy of thin-film CdTe/CdS solar cells under varied illumination
Abstract
The electrical properties of CdTe/CdS solar cells grown by metal organic chemical vapor deposition were investigated by a technique of impedance measurements under varied intensity of AM1.5 illumination. A generalized impedance model was developed and applied to a series of CdTe/CdS cells with variations in structure and doping. The light measurements were compared to the conventional ac measurements in dark under varied dc bias, using the same methodology for equivalent circuit analysis in both cases. Detailed information on the properties of the device structure was obtained, including the properties of the main p-n junction under light, minority carrier lifetime, back contact, as well as the effect of the blocking ZnO layer incorporated between the transparent conductor and CdS layers. In particular, the comparison between samples with different chemical concentrations of As has shown that the total device impedance and the series resistance are strongly increased at lower As densities, resulting in the lower collection current and efficiencies. At the same time the minority carrier lifetime was found to be one order of magnitude larger for the lowest value of As density, when compared to the optimized devices.